Product type | IC(ON) (mA) min | Test Conditions | Output | Aperture Width (mm) |
MOC70P2 | 2.0 | IF = 20mA, VCE = 10V | Phototransistor | 1.0 |
MOC70P3 | 4.0 | IF = 20mA, VCE = 10V | Phototransistor | 1.0 |
The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged in a injection molded housing. The housing is designed for wide gap. Non contact sensing.