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 Application Note : Design of Fundamental Phototransistor Circuits
| Product Type | IC(ON) (μA) Typ | @ Ee (mW/cm2) VCE = 5V, 255 nm | Reception angle @ half intensity (Deg) | Output | |
| L14U1 | 100 | 0.2 | 80 | Phototransistor |  | 
| L14U2 | 50 | 0.2 | 80 | Phototransistor | 
| Product Type | IC(ON) (mA) min | @ Ee (mW/cm2) VCE = 5V, 940 nm | Reception angle @ half intensity (Deg) | Output | |
| L14T1 | 16 | 0.5 | 14 | Phototransistor |  | 
| L14D1 | 6 | 0.05 | 8 | Photodarlington | 
| Product Type | IC(ON) (mA) min | @ Ee (mW/cm2) VCE = 5V, 940 nm | Reception angle @ half intensity (Deg) | Output | |
| BPW36 | 1.00 | 0.5 | 20 | Phototransistor |  | 
| BPW37 | 0.50 | 0.5 | 20 | Phototransistor | |
| L14G1 | 1.00 | 0.5 | 20 | Phototransistor | |
| L14G2 | 0.50 | 0.5 | 20 | Phototransistor | |
| L14G3 | 2.00 | 0.5 | 20 | Phototransistor | |
| L14P1 | 6.50 | 0.5 | 16 | Phototransistor | |
| L14P2 | 13.0 | 0.5 | 16 | Phototransistor | |
| BPW38 | 3.00 | 0.05 | 16 | Photodarlington | |
| L14F1 | 3.00 | 0.05 | 16 | Photodarlington | |
| L14F2 | 1.00 | 0.05 | 16 | Photodarlington | 
| Product Type | Ee+ (mW/cm2) @880nm max | VOL (V) max | Reception angle @ half intensity (Deg) | Output | |
| QSA156 | 0.25 | 0.4 | 24 | Buffer Totem Pole |  | 
| QSA157 | 0.25 | 0.4 | 24 | Inverter Totem Pole | |
| QSA158 | 0.25 | 0.4 | 24 | Buffer Open Collector | |
| QSA159 | 0.25 | 0.4 | 24 | Inverter Open Collector | 
| Product Type | IC(ON) (mA) min | @ Ee (mW/cm2) VCE = 5V, 940 nm | Reception angle @ half intensity (Deg) | Output | |
| L14C1 | 0.16 | 0.5 | 80 | Phototransistor |  | 
| L14C2 | 0.08 | 0.5 | 80 | Phototransistor | |
| L14N1 | 1.00 | 0.5 | 80 | Phototransistor | |
| L14N2 | 2.00 | 0.5 | 80 | Phototransistor |