Product type | IC(ON) (mA) min | Test Conditions | Output | Aperture Width (mm) |
QVE00832 | 0.50 | If=20mA, VCE = 10V | Phototransistor | 0.50 |
The QVE00832 consists of an infrared light emitting diode coupled to a NPN silicon phototransistor packaged into an injection molded housing. The housing is designed for wide-gap non-contact sensing.