L14N1, L14N2

Hermetic Silicon Phototransistor

Product type IC(ON) (mA) min @ Ee (mW/cm2) VCE = 5V, 940nm Reception angle @ half intensity (Deg) Output
L14N1 1.00 0.5 80 Phototransistor
L14N2 2.00 0.5 80 Phototransistor

Features

  • TO 18 Package
  • Hermetically sealed
  • Wide reception angle
  • RoHS compliant

Description

The L14N1 and L14N2 are silicon phototransistors mounted in a Wide angle TO-18 package. Devices can be used as a Photodiode by wiring the Base and Collector leads.

Download the datasheet

 

L14N1, L14N2 package dimensions schematic